IXBH40N160

High Voltage BIMOSFET, Monolithic Bipolar, MOS Transistor, TO-247, 1600 V, 6 g

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Price:: US $2.30~4.00 / piece [Get Latest Price]

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PartNumber:: IXBH40N160

Brand:: IXYS Corporation - ixys | Pack: TO | D/C: 09+

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Products Upload time: 2011-08-11

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Part Number:IXBH40N160
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Product Summary

The IXBH40N160 is a high Voltage BIMOSFET monolithic bipolar MOS transistor. The applications of it include (1)AC motor speed control; (2)DC servo and robot drives; (3)DC choppers; (4)Uninterruptible power supplies (UPS); (5)Switched-mode and resonant-mode power supplies; (6)CRT deflection; (7)Lamp ballasts.

Parametrics

IXBH40N160 maximum ratings: (1)VCES, at TJ = 25℃ to 150℃: 1600 V; (2)VCGR, at TJ = 25℃ to 150℃; RGE = 1 MΩ: 1600 V; (3)VGES, Continuous: ±20 V; (4)VGEM, Transient: ±30 V; (5)IC25, at TC = 25℃: 33 A; (6)IC90, at TC = 90℃: 20 A; (7)ICM, at TC = 25℃, 1 ms: 40 A; (8)SSOA(RBSOA) VGE = 15 V, TVJ = 125℃, RG = 22 Ω VCE = 0.8·VCES, Clamped inductive load, L = 100 μH: ICM = 40 A; (9)PC, at TC = 25℃: 350 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃; (13)TL: at 1.6 mm (0.063 in) from case for 10 s: 300 ℃; (14)Md, at Mounting torque: 1.15/10Nm/lb.in.; (15)Weight: 6 g.

Features

IXBH40N160 features: (1)International standard package JEDEC TO-247 AD; (2)High Voltage BIMOSFETTM: replaces high voltage Darlingtons and series connected MOSFETs; lower effective RDS(on); (3)Monolithic construction: high blocking voltage capability; very fast turn-off characteristics; (4)MOS Gate turn-on: drive simplicity; (5)Intrinsic diode.