IXBH40N160

High Voltage BIMOSFET, Monolithic Bipolar, MOS Transistor, TO-247, 1600 V, 6 g

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.30~4.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $2.30~4.00

PartNumber:: IXBH40N160

Brand:: IXYS Corporation - ixys | Pack: TO | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. abby's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-08-11

From Other Seller

Part Number:IXBH40N160
US $2.30 - 4.00
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
iphone5 data cable

US $4.00 - 5.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IXBH40N160 is a high Voltage BIMOSFET monolithic bipolar MOS transistor. The applications of it include (1)AC motor speed control; (2)DC servo and robot drives; (3)DC choppers; (4)Uninterruptible power supplies (UPS); (5)Switched-mode and resonant-mode power supplies; (6)CRT deflection; (7)Lamp ballasts.

Parametrics

IXBH40N160 maximum ratings: (1)VCES, at TJ = 25℃ to 150℃: 1600 V; (2)VCGR, at TJ = 25℃ to 150℃; RGE = 1 MΩ: 1600 V; (3)VGES, Continuous: ±20 V; (4)VGEM, Transient: ±30 V; (5)IC25, at TC = 25℃: 33 A; (6)IC90, at TC = 90℃: 20 A; (7)ICM, at TC = 25℃, 1 ms: 40 A; (8)SSOA(RBSOA) VGE = 15 V, TVJ = 125℃, RG = 22 Ω VCE = 0.8·VCES, Clamped inductive load, L = 100 μH: ICM = 40 A; (9)PC, at TC = 25℃: 350 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃; (13)TL: at 1.6 mm (0.063 in) from case for 10 s: 300 ℃; (14)Md, at Mounting torque: 1.15/10Nm/lb.in.; (15)Weight: 6 g.

Features

IXBH40N160 features: (1)International standard package JEDEC TO-247 AD; (2)High Voltage BIMOSFETTM: replaces high voltage Darlingtons and series connected MOSFETs; lower effective RDS(on); (3)Monolithic construction: high blocking voltage capability; very fast turn-off characteristics; (4)MOS Gate turn-on: drive simplicity; (5)Intrinsic diode.