Product Summary
The UMZ1NTR is a NPN / PNP epitaxial planar silicon transistor.
Parametrics
UMZ1NTR absolute maximum ratings (Ta = 25℃): (1)Collector-base voltage, VCBO: 60 V; (2)Collector-emitter voltage, VCEO: 50v; (3)Emitter-base voltage, VEBO: 7v; (4)Collector current, IC: 150mA; (5)Power dissipation, PC: 150 (TOTAL)mW; (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
UMZ1NTR features: (1)Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package; (2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines; (3)Transistor elements are independent, eliminating interference; (4)Mounting cost and area can be cut in half.
Diagrams
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![]() UMZ1NTR |
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![]() Transistors Bipolar (BJT) NPN/PNP 50V 150MA SOT-363 |
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![]() DIODE ZENER DUAL 12V 200MW 4UMD |
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![]() UMZ12N |
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![]() UMZ12NT106 |
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![]() UMZ16NT106 |
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![]() UMZ18NT106 |
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![]() DIODE ZENER DUAL 17.56V 3UMD |
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