(China (Mainland))
Product Summary
The 2SK3522 is a n-channel silicon power MOSFET. It is used in Switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Parametrics
2SK3522 absolute maximum ratings: (1)Drain-source voltage, VDS: 500v; VDSX: 500v; (2)Continuous drain current, ID: ±21A; (3)Pulsed drain current, ID(puls]: ±84A; (4)Gate-source voltage, VGS: ±30v; (5)Repetitive or non-repetitive, IAR: 21A; (6)Maximum Avalanche Energy, EAS: 400mj; (7)Maximum Drain-Source dV/dt, dVDS/dt: 20kV/μs; (8)Peak Diode Recovery dV/dt, dV/dt: 5kV/μs; (9)Max. power dissipation PD: 2.50 W at Ta=25℃; 220W at Tc=25℃ ; (10)Operating and storage temperature range: Tch: +150℃; Tstg: -55 to +150℃.
Features
2SK3522 features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK3522-01 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
2SK3001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3009 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3012 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3013 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2SK3017 |
|
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
|
|
||||||||||||
