SI7460DP-T1-GE3

fast switching mosfet, 60V, 8A, 125mJ, QFN-8

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Price:: US $1.30~2.20 / piece [Get Latest Price]

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PartNumber:: SI7460DP-T1-GE3

Brand:: Vishay Siliconix - Vishay | Pack: QFN | D/C: 11+

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Products Upload time: 2012-07-04

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Part Number:SI7460DP-T1-GE3
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Product Summary

The SI7460DP-T1-GE3 is a fast switching mosfet. A basic measure of the SI7460DP-T1-GE3 thermal performance is the junction-to-case thermal resistance, Rθjc, or the junction-to-foot thermal resistance, Rθjf. This parameter is measured for the SI7460DP-T1-GE3 mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted. Table 1 shows a comparison of the DPAK, PowerPAK SO-8, and standard SO-8. The SI7460DP-T1-GE3 has thermal performance equivalent to the DPAK, while having an order of magnitude better thermal performance over the SO-8. The only concern when mounting a PowerPAK on a standard SO-8 pad pattern is that there should be no traces running between the body of the MOSFET. Where the standard SO-8 body is spaced away from the pc board, allowing traces to run underneath, the Power- PAK sits directly on the pc board.

Parametrics

SI7460DP-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID: 18,11A; (4)Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID: 14, 8A; (5)Pulsed Drain Current IDM: 40A; (6)Continuous Source Current (Diode Conduction)a IS: 4.3, 1.6A; (7)Avalanche Current IAS: 50A; (8)Avalanche Energy EAS: 125mJ.

Features

SI7460DP-T1-GE3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET® Power MOSFETs; (3)New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile.