(China (Mainland))
Product Summary
The N-Channel enhancement mode power field effect transistor FQA170N06 is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA170N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Parametrics
FQA170N06 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 60 V; (2)ID, Drain Current: Continuous (TC = 25℃): 170 A; Continuous (TC = 100℃): 120 A; (3)IDM, Drain Current - Pulsed: 680 A; (4)VGSS, Gate-Source Voltage: ± 25 V; (5)EAS, Single Pulsed Avalanche Energy: 990 mJ; (6)IAR, Avalanche Current: 170 A; (7)EAR, Repetitive Avalanche Energy: 37.5 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 7.0 V/ns; (9)PD, Power Dissipation (TC = 25℃): 375 W; Derate above 25℃: 2.5 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +175 ℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQA170N06 features: (1)170A, 60V, RDS(on) = 0.0056Ω@VGS = 10 V; (2)Low gate charge ( typical 220 nC); (3)Low Crss ( typical 620 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQA170N06 |
Fairchild Semiconductor |
MOSFET 60V N-Channel QFET |
Data Sheet |
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Fairchild Semiconductor |
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Data Sheet |
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Fairchild Semiconductor |
MOSFET 800V N-Ch advance QFET |
Data Sheet |
Negotiable |
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Fairchild Semiconductor |
MOSFET 800V N-Ch QFET Advance |
Data Sheet |
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FQA11N40 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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FQA11N90 |
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MOSFET 900V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA11N90_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
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