Product Summary

The IXFX34N80 is a HiPerFET Power MOSFET. Applications of the IXFX34N80 are: DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls

Parametrics

IXFX34N80 absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 800 V; (2)VGS Continuous: ±20 V; (3)VGSM Transient: ±30 V; (4)ID25 TC = 25℃: 34 A; (5)IDM TC = 25℃, pulse width limited by TJM: 136 A; (6)IAR TC = 25℃: 36 A; (7)EAR TC = 25℃: 64 mJ; (8)EAS TC = 25℃: 3 J; (9)PD TC = 25℃: 560 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃.

Features

IXFX34N80 features: (1)International standard packages; (2)Low RDS (on) HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance - easy to drive and to protect; (6)Fast intrinsic rectifier.

Diagrams

IXFX34N80 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXFX34N80
IXFX34N80

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MOSFET 800V 34A

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Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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