(China (Mainland))
Product Summary
The IXFX34N80 is a HiPerFET Power MOSFET. Applications of the IXFX34N80 are: DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls
Parametrics
IXFX34N80 absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 800 V; (2)VGS Continuous: ±20 V; (3)VGSM Transient: ±30 V; (4)ID25 TC = 25℃: 34 A; (5)IDM TC = 25℃, pulse width limited by TJM: 136 A; (6)IAR TC = 25℃: 36 A; (7)EAR TC = 25℃: 64 mJ; (8)EAS TC = 25℃: 3 J; (9)PD TC = 25℃: 560 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃.
Features
IXFX34N80 features: (1)International standard packages; (2)Low RDS (on) HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance - easy to drive and to protect; (6)Fast intrinsic rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFX34N80 |
Ixys |
MOSFET 800V 34A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFX 100N25 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFX 120N25 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFX 48N60P |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFX100N25 |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
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|
IXFX120N20 |
Ixys |
MOSFET 200V 120A |
Data Sheet |
Negotiable |
|
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|
IXFX120N25 |
Ixys |
MOSFET 120 Amps 250V 0.022 Rds |
Data Sheet |
Negotiable |
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