Product Summary
The IRF8010PBF is a hexfet power mosfet.The applications of the IRF8010PBF are high frequency DC-DC converters, usp and motor control and lead-free.
Parametrics
IRF8010PBF absolute maximum ratings: (1)ID @ TC = 25°C Continuous Drain Current, VGS @ 10V: 80A; (2)ID @ TC = 100°C Continuous Drain Current, VGS @ 10V: 57A; (3)IDM Pulsed Drain Current ①: 320A; (4)PD @TC = 25°C Power Dissipation W: 260W; (5)Linear Derating Factor W/°C: 1.8 W/°C; (6)VGS Gate-to-Source Voltage V: ± 20 V; (7)dv/dt Peak Diode Recovery dv/dt ③ V/ns: 16 V/ns.
Features
IRF8010PBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current; (4)Typical RDS(on)= 12mΩ.
Diagrams
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![]() MOSFET MOSFT 100V 80A 15mOhm 81nC |
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![]() IRF8010S |
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![]() IRF8010STRLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 100V 80A 15mOhm 81nC |
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