Product Summary

The BLV25 is a N-P-N silicon planar epitaxial transistor, which is primarily for use in v.h.f.-f.m. broadcast transmitters.

Parametrics

BLV25 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value: max. 65 V; (2)Collector-emitter voltage (open base): max. 33 V; (3)Emitter-base voltage (open-collector): max. 4 V; (4)Collector current (average): max. 17.5 A; (5)Collector current (peak value); f > 1 MHz: max. 35 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃: max. 220 W; (7)Storage temperature: -65 to +150 ℃; (8)Operating junction temperature: max. 200 ℃.

Features

BLV25 features: (1)internally matched input for wideband operation and high power gain; (2)multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; (3)gold-metallization ensures excellent reliability.

Diagrams

BLV25 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLV25
BLV25

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $95.63
1-10: $87.75
10-25: $78.75
25-50: $69.75
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLV20
BLV20

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
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