(China (Mainland))
Product Summary
The BC337-40 is a NPN epitaxial silicon transistor.It is widely applied in switching and amplifier. The BC337-40 is suitable for AF-Driver stages and low power output stages.
Parametrics
BC337-40 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 50V; (2)Collector-Emitter Voltage, VCEO: 45V; (3)Emitter-Base Voltage, VEBO: 5V; (4)Collector Current (DC), IC: 800mA; (5)Collector Power Dissipation, PC: 625mW; (6)Junction Temperature, TJ: 150℃; (7)Storage Temperature, TSTG: -55 to 150℃.
Features
BC337-40 features: (1)Capable of 0.625Watts of Power Dissipation; (2)Collector-current 0.8A; (3)Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338); (4)Lead Free Finish/RoHS Compliant (P Suffix designates; (5)RoHS Compliant. See ordering information); (6)Epoxy meets UL 94 V-0 flammability rating; (7)Moisure Sensitivity Level 1.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BC337-40 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE RADIAL |
Data Sheet |
Negotiable |
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 |
BC337-40-AP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) NPN -0.8A 0.625W |
Data Sheet |
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 |
BC337-40RL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 800mA 50V NPN |
Data Sheet |
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BC337-40ZL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 800mA 50V NPN |
Data Sheet |
Negotiable |
|
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|
BC337-40ZL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 800mA 50V NPN |
Data Sheet |
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BC337-40RL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 800mA 50V NPN |
Data Sheet |
Negotiable |
|
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 |
BC337-40,412 |
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TRANSISTOR NPN 500MA 45V TO-92 |
Data Sheet |
Negotiable |
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BC337-40,116 |
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TRANSISTOR NPN 500MA 45V TO-92 |
Data Sheet |
Negotiable |
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