Product Summary

The MG500Q1US11 is an IGBT module. The features of MG500Q1US11 are high power switching and motor control applications.

Parametrics

MG500Q1US11 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: ±20 V; (3)Junction Temperature Tj: 150 °C; (4)Storage Temperature Range Tstg: -40_125 °C; (5)Collector Current DC ic: 500 A; (6)Collector Current 1ms ICP: 1000 A; (7)Forward Current DC If: 500 A; (8)Forward Current 1ms Ifm: 1000 A.

Features

MG500Q1US11 features: (1) High Input Impedane; (2) High Speed : tf=0.5/μs (Max.), trr -0.5/μs (Max.); (3) Low Saturation Voltage: vCE(sat):4.0v(Max.); (4) Enhancement-Mode; (5) The Electrodes are Isolated from Case.

Diagrams

MG500Q1US11 dimmension

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable